Numerical study and experimental investigation of zone refining in ultra-high purification of gallium and its use in the growth of GaAs epitaxial layers

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1521-1528

  Ghosh, K ^a   Mani, V N ^b   Dhar, S ^a  

^a UNIVERSITY OF CALCUTTA   (India)

^b CENTRE FOR MATERIALS FOR ELECTRONICS TECHNOLOGY C MET   (India)

Author keywords

A1. Computer simulation; A1. Purification; A2. Zone refining; A3. Liquid phase epitaxy; B1. Gallium; B2. Gallium arsenide.

Indexed keywords

ARSENIC COMPOUNDS; COMPUTER SIMULATION; CRYSTAL GROWTH; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GLOW DISCHARGES; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; IMPURITIES; LIQUID PHASE EPITAXY; LIQUIDS; MASS SPECTROMETERS; PURIFICATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; ZONE MELTING;

A1. COMPUTER SIMULATION; A1. PURIFICATION; A2. ZONE REFINING; A3. LIQUID PHASE EPITAXY; B1. GALLIUM; B2. GALLIUM ARSENIDE.;

REFINING;

EID: 62549144406     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.102     Document Type: Article

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