Active-matrix microelectrode arrays integrated with vertically aligned carbon nanofibers

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 254-257

  Park, Jungwon ^a   Kwon, Seyeoul ^a   Jun, Seung Ik ^b   Mcknight, Timothy E ^c   Melechko, Anatoli V ^d   Simpson, Michael L ^a,c   Dhindsa, Manjeet ^a,c   Heikenfeld, Jason ^e   Rack, Philip D ^e  

^a University of Tennessee Knoxville   (United States)

^b dpiX LLC   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d North Carolina State University   (United States)

^e University of Cincinnati   (United States)

Author keywords

Active matrix addressing; Microelectrode array (MEA); Thin film transistor (TFT); Vertically aligned carbon nanofiber (VACNF)

Indexed keywords

GROWTH (MATERIALS); INTELLIGENT MATERIALS; MICROELECTRODES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE DEFECTS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

ACTIVE MATRIX ADDRESSING; BOTTOM GATES; CELL SENSING; CRITICAL DEVICES; DEVICE CHARACTERISTICS; DIRECT CURRENT PLASMAS; GROWTH PROCESS; HIGH TEMPERATURES; MATERIALS AND PROCESS; MICROELECTRODE ARRAY (MEA); THIN-FILM TRANSISTOR (TFT); VERTICALLY ALIGNED CARBON NANOFIBER (VACNF);

CARBON NANOFIBERS;

EID: 62549124952     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011927     Document Type: Article

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