Formation and nonvolatile memory application of Ge nanocrystals by using internal competition reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 layers

IEEE Transactions on Nanotechnology

Volumn 8, Issue 2, 2009, Pages 185-189

  Chen, Wei Ren ^a   Chang, Ting Chang ^b   Hsieh, Yen Ting ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Germanium nanocrystal (NC); Nonvolatile memory (NVM); Poly silicon oxide nitride oxide silicon (SONOS) type

Indexed keywords

APPLICATIONS; COMPETITION; NANOCRYSTALS; POLYSILICON; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITOR STRUCTURES; COMPETITION REACTIONS; FORMATION MECHANISMS; FORMATION PROCESS; GE NANOCRYSTALS; GERMANIUM NANOCRYSTAL (NC); HYSTERESIS CHARACTERISTICS; LOW VOLTAGES; LOW-POWER DEVICES; MEMORY WINDOWS; NON-VOLATILE MEMORY APPLICATIONS; NONVOLATILE MEMORY (NVM); POLY-SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS)-TYPE; PROGRAM OPERATIONS; RETENTION CHARACTERISTICS; THERMAL BUDGETS;

GERMANIUM;

EID: 62449171602     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005728     Document Type: Article

References (15)

1. R. Bez, E. Camerlenghi, A. Modelli, and A. Visconti, "Introduction to flash memory," Proc. IEEE, vol. 91. no. 4, pp. 489-502, Apr. 2003.
2. J. D. Blauwe, "Nanocrystal nonvolatile memory devices," IEEE Trans. Nanotechnol., vol. 1, no. 1, pp. 72-77, Mar. 2002.
3. W. R. Chen, T. C. Chang, P. T. Liu, P. S. Lin, C. H. Tu, and C. Y. Chang. "Formation of stacked Ni silicide nanocrystals for nonvolatilememory application," Appl. Phys. Lett., vol. 90, pp. 112108-1-112108-3, 2007.
4. S. Tiwari, F. Rana. K. Chan, H. Hanafi, W. Chan, and D. Buchanan. "Volatile and non-volatile memories in silicon with nano-crystal storage," in IEDM Tech. Dig., 1995, pp. 521-524.
5. J. H. Chen, Y. Q. Wang, W. J. Yoo, Y.-C. Yeo, G. Samudra, D. S. H. Chan. A. Y. Du, and D.-L. Kwong, "Nonvolatile flash memory device using Genanocrystals embedded in HfAlO high-k tunneling and control oxides: Device fabrication and electrical performance," IEEE Trans. Electron Devices, vol. 51, no. 11, pp. 1840-1848, Nov. 2004.
6. M. Shalchian, J. Grisolia, G. B. Assayag, H. Coffin, S. M. Atarodi, and A. Claverie, "Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor," Appl. Phys. Lett., vol. 86, pp. 163111-1-163111-3,2005.
7. T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, S. H. Lin, and S. M. Sze, "A novel approach of fabricating germanium nanocrystals for nonvolatile memory application," Electrochem. Solid State Lett., vol. 7, pp. G17-G19, 2004.
8. T. C. Chang, S. T. Yan, P. T. Liu, C. H. Hsu, M. T. Tang, and S. M. Sze, "A distributed charge storage with GeO nanodots," Appl. Phys. Lett., vol. 84, pp. 2581-2583, 2004.
9. 2 pressures," J. Appl. Phys., vol. 93, pp. 9988-9996, 2003.
10. C. H. Tu, T. C. Chang, P. T. Liu, H. C. Liu, S. M. Sze, andC. Y. Chang, "Improved memory window for Ge nanocrystals embedded in SiON layer," Appl. Phys. Lett., vol. 89, pp. 162105-1-162105-3, 2006.
11. J. D. Cox, D. D. Wagman, and V. A. Medvedev, CODATA Key Values for Thermodynamics. New York: Hemisphere, 1989.
12. x films," J. Appl. Phys., vol. 94, pp. 7071-7075, 2003.
13. J. T. Law and P. S. Meigs, "Rates of oxidation of Germanium," J. Electrochem. Soc., vol. 104, pp. 154-159, 1957.
14. S. K. Stanley, S. S. Coffee, and J. G. Ekerdt, "Interactions of germanium atoms with silica surfaces," Appl. Surf. Sci., vol. 252, pp. 878-882, 2005.
15. C. Lee, T. H. Hou, and E. C. Kan, "Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2697-2702, Dec. 2005.