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Volumn 20, Issue 8, 2008, Pages
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Electronic and structural properties of NaZnX (X = P, As, Sb): An ab initio study
a
ANNA UNIVERSITY
(India)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CONDUCTIVITY;
ENERGY GAP;
RADIATION DAMAGE;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR MATERIALS;
TIN;
TITANIUM COMPOUNDS;
ZINC;
AB INITIO STUDIES;
AMBIENT CONDITIONS;
BAND GAPS;
BAND-GAP SEMICONDUCTORS;
BULK MODULUS;
COHESIVE ENERGIES;
DIRECT BAND GAPS;
ELECTRONIC AND STRUCTURAL PROPERTIES;
ENERGY VOLUMES;
EXPERIMENTAL OBSERVATIONS;
FIRST-PRINCIPLES;
GROUND-STATE PROPERTIES;
HIGH PRESSURES;
LATTICE PARAMETERS;
LINEAR MUFFIN-TIN ORBITAL METHODS;
LOCAL DENSITY-APPROXIMATION;
METALLIC BEHAVIOURS;
PRESSURE DEPENDENCES;
STRUCTURAL PHASE STABILITIES;
STRUCTURAL PHASE TRANSITIONS;
THREE PHASIS;
TIGHT BINDINGS;
TRANSITION PRESSURES;
TYPE STRUCTURES;
ZINC BLENDES;
PHASE STABILITY;
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EID: 62249162207
PISSN: 09538984
EISSN: 1361648X
Source Type: Journal
DOI: 10.1088/0953-8984/20/8/085220 Document Type: Article |
Times cited : (41)
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References (27)
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