Preparation and characterization of α-Fe2O3 polyhedral nanocrystals via annealing technique

Materials Letters

Volumn 63, Issue 12, 2009, Pages 1047-1050

  Kumar, Rajesh ^a,b   Gautam, S ^c   Hwang, In Chul ^b   Lee, Jae Rhung ^d   Chae, K H ^c   Thakur, Nagesh ^a  

^a HIMACHAL PRADESH UNIVERSITY   (India)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d POSCO   (South Korea)

Author keywords

Annealing temperature; Crystal structure; Gas flow; Nanomaterials; Polyhedral

Indexed keywords

AERODYNAMICS; ANNEALING; ARGON; CRYSTAL STRUCTURE; DIFFRACTION; FLOW OF GASES; FLOW RATE; GASES; HOLOGRAPHIC INTERFEROMETRY; NANOCRYSTALS; NANOPARTICLES; NANOSTRUCTURED MATERIALS;

ANNEALING TECHNIQUES; ANNEALING TEMPERATURE; CRYSTALLINE NATURES; ENERGY-DISPERSIVE X-RAYS; FIELD-EMISSION ELECTRONS; GAS FLOW; GAS-FLOW RATES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; NANOMATERIALS; NON-UNIFORM; POLYHEDRAL; POLYHEDRAL NANOPARTICLES; REACTION CHAMBERS; SELECTED AREA DIFFRACTION PATTERNS; SEM; SILICON SUBSTRATES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 62249161402     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.02.003     Document Type: Article

References (21)

1. Zhang X., and Janekhe S.A. Perlstein J Chem. Mater 8 (1996) 1571-1574
2. Fendler J.H. Chem Mater 8 (1996) 1616-1624
3. Wen X.G., Wang S.H., Ding Y., Wang Z.L., and Yang S.H. J Phys Chem B. 109 (2005) 215-220
4. Shevchenko E.V., Talapin D.V., Schnablegger H., Kornowski A., Festin O., Svedlindh P., et al. J Am Chem Soc. 125 (2003) 9090-9101
5. Xu L.Q., Zhang W.Q., Ding Y.W., Peng Y.Y., Zhang S.Y., and Yu W.C. J Phys Chem B 108 (2004) 10859-10862
6. Park S.J., Kim S., Lee S., Khim Z.G., Char K., and Hyeon T. J Am Chem Soc 122 (2000) 8581-8582
7. Puntes V.F., Krishan K.M., and Alivisatos A.P. Science 291 (2001) 2115-2117
8. Cordente N., Respaud M., Senocq F., Casanove M.J., Amiens C., and Chaudret B. Nano Lett 1 (2001) 565-568
9. Park J., Koo B., Hwang Y., Bae C., An K., and Park J.G. Angew Chem 116 (2004) 2332-2335
10. Shevchenko E.V., Talapin D.V., Rogach A.L., Kornowski A., Haase M., and Weller H. J Am Chem Soc 124 (2002) 11480-11485
11. Liu X.Q., Tao S.W., and Shen Y.S. Sens Actuators B 40 (1997) 161-165
12. Bell A.T. Science 299 (2003) 1688-1691
13. Nakatari Y., and Matsuoka M. Jpn J Appl Phys 21 (1982) L758-760
14. Glisenti A. J Chem Soc Faraday Trans 94 (1998) 3671-3676
15. Hamada S., and Matijevic E. J Chem Soc Faraday Trans 1 78 (1982) 2147-2156
16. Hamada S., Niizrki S., and Kudo Y. Bull Chem Soc Jpn 59 (1986) 3443-3450
17. Ayyub P., Multani M., Barma M., Palkar V.R., and Vijayaraghavan R. J Phys C Solid State Phys 21 (1988) 2229-2245
18. Dong D., Hong P., and Dai S. Mater Res Bull 30 (1995) 537-541
19. Pascal C., Pascal J.L., and Favier F. Chem Mater 11 (1999) 141-147
20. Sudakar C., Subbanna G.N., and Dutty T.R.N. J Mater Chem 12 (2002) 107-116
21. Weller D., Sun S.H., Murray C., Folks L., and Moser A. IEEE Trans Magn 37 (2001) 2185-2187