Thermosonic bonding of high-power semiconductor devices for integration with planar microstrip circuitry

Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium

Volumn , Issue , 1998, Pages 390-393

  Lawyer, P H ^a   Choudhury, D ^a   Wetzel, M D ^a   Rensch, D B ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIODES; GUNN DEVICES; INDUSTRIAL ELECTRONICS; MANUFACTURE; TIMING CIRCUITS;

ASSEMBLY PARAMETERS; BONDING TEMPERATURES; ELEVATED TEMPERATURE; HIGH-POWER DEVICES; HIGH-POWER SEMICONDUCTOR DEVICES; THERMO-SONIC BONDING; THERMOSONIC BONDING PROCESS; ULTRASONIC ENERGY;

POWER SEMICONDUCTOR DIODES;

EID: 62249087430     PISSN: 10898190     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEMT.1998.731163     Document Type: Conference Paper

References (0)