Effect of an in-plane magnetic field on the spin transport through a Rashba superlattice

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 8, 2009, Pages

  Zhang, Ya ^a   Zhai, Feng ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 61949320525     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.085311     Document Type: Article

References (29)

1. I. Žutić, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. 76, 323 (2004). 10.1103/RevModPhys.76.323
2. E. I. Rashba, Fiz. Tverd. Tela (Leningrad) 2, 1224 (1960)
3. E. I. Rashba, [Sov. Phys. Solid State 2, 1109 (1960)]
4. Yu. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984). 10.1088/0022-3719/17/33/015
5. G. F. Dresselhaus, Phys. Rev. 100, 580 (1955). 10.1103/PhysRev.100.580
6. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. 78, 1335 (1997) 10.1103/PhysRevLett.78.1335
7. C.-M. Hu, J. Nitta, T. Akazaki, H. Takayanagai, J. Osaka, P. Pfeffer, and W. Zawadzki, Phys. Rev. B 60, 7736 (1999). 10.1103/PhysRevB.60.7736
8. G. Engels, J. Lange, Th. Schäpers, and H. Lüth, Phys. Rev. B 55, R1958 (1997). 10.1103/PhysRevB.55.R1958
9. D. Grundler, Phys. Rev. Lett. 84, 6074 (2000). In this work the Rashba spin splitting can be controlled under a constant carrier density by the application of both a back gate and a front gate to the quantum well. 10.1103/PhysRevLett.84.6074
10. Y. Sato, T. Kita, S. Gozu, and S. Yamada, J. Appl. Phys. 89, 8017 (2001). 10.1063/1.1362356
11. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990). 10.1063/1.102730
12. S. Bandyopadhyay and M. Cahay, Appl. Phys. Lett. 85, 1814 (2004). 10.1063/1.1790038
13. C. Flindt, A. S. Sorensen, and K. Flensberg, Phys. Rev. Lett. 97, 240501 (2006). 10.1103/PhysRevLett.97.240501
14. A. Sarkar and T. K. Bhattacharyya, Appl. Phys. Lett. 90, 173101 (2007). 10.1063/1.2731521
15. A. A. Kiselev and K. W. Kim, Appl. Phys. Lett. 78, 775 (2001). 10.1063/1.1347023
16. J. I. Ohe, M. Yamamoto, T. Ohtsuki, and J. Nitta, Phys. Rev. B 72, 041308 (R) (2005). 10.1103/PhysRevB.72.041308
17. A. W. Cummings, R. Akis, and D. K. Ferry, Appl. Phys. Lett. 89, 172115 (2006). 10.1063/1.2364859
18. F. Zhai and H. Q. Xu, Phys. Rev. B 76, 035306 (2007). 10.1103/PhysRevB.76.035306
19. J.-F. Liu, Z.-C. Zhong, L. Chen, D. P. Li, C. Zhang, and Z. S. Ma, Phys. Rev. B 76, 195304 (2007). 10.1103/PhysRevB.76.195304
20. F. Zhai and H. Q. Xu, Phys. Rev. Lett. 94, 246601 (2005). 10.1103/PhysRevLett.94.246601
21. F. Zhai and H. Q. Xu, Phys. Rev. B 72, 085314 (2005). 10.1103/PhysRevB.72.085314
22. S. J. Gong and Z. Q. Yang, J. Appl. Phys. 102, 033706 (2007). 10.1063/1.2767373
23. P. Středa and P. Šeba, Phys. Rev. Lett. 90, 256601 (2003). 10.1103/PhysRevLett.90.256601
24. Y. V. Pershin, J. A. Nesteroff, and V. Privman, Phys. Rev. B 69, 121306 (R) (2004). 10.1103/PhysRevB.69.121306
25. H. Tamura and T. Ando, Phys. Rev. B 44, 1792 (1991). 10.1103/PhysRevB.44. 1792
26. H. Q. Xu, Phys. Rev. B 50, 8469 (1994) 10.1103/PhysRevB.50.8469
27. L. B. Zhang, F. Zhai, and H. Q. Xu, Phys. Rev. B 74, 195332 (2006). 10.1103/PhysRevB.74.195332
28. The In0.75 Ga0.25 As 2DEG reported in Ref. have both a much larger SOI strength and g factor than the GaAs 2DEG, and thus more suitable for the realization of the proposed device.
29. S. J. Gong and Z. Q. Yang, J. Phys.: Condens. Matter 19, 446209 (2007). 10.1088/0953-8984/19/44/446209