Analysis of heterointerface recombination by Zn1-xMgxO for window layer of Cu(In,Ga)Se2 solar cells

Solar Energy

Volumn 83, Issue 4, 2009, Pages 477-479

  Tanaka, Kiyoteru ^a   Minemoto, Takashi ^a   Takakura, Hideyuki ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Cu(In,Ga)Se2; Recombination mechanism; Zn1 xMgxO

Indexed keywords

ACTIVATION ENERGY; CADMIUM COMPOUNDS; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM; HETEROJUNCTIONS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY; ZINC; ZINC OXIDE;

CDS; CDS LAYERS; CIGS SOLAR CELLS; CONDUCTION BAND OFFSETS; CU(IN,GA)SE2; CURRENT-VOLTAGE MEASUREMENTS; DOMINANT MECHANISMS; HETERO INTERFACES; HIGH EFFICIENCIES; OPEN-CIRCUIT VOLTAGES; RECOMBINATION MECHANISM; SHUNT RESISTANCES; TEMPERATURE DEPENDENTS; WINDOW LAYERS; ZN1-XMGXO; ZNO;

SEMICONDUCTING CADMIUM COMPOUNDS;

ACTIVATION ENERGY; CURRENT; ESTIMATION METHOD; SOLAR POWER;

EID: 61849161046     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2008.09.003     Document Type: Article

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