Correlation between in situ raman scattering and electrical conductance for an lndividual double-walled carbon nanotube

Nano Letters

Volumn 9, Issue 1, 2009, Pages 383-387

  Yuan, Shaoning ^a,b   Zheng, Qing ^a,b   You, Yumeng ^a,b   Shen, Ze Xiang ^a,b   Shimamoto, Daisuke ^a,b   Endo, Morinobu ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRIC SHELLS; DOUBLE-WALLED CARBON NANOTUBES; ELECTRICAL CONDUCTANCES; ENERGY BANDS; GATE VOLTAGES; IN-SITU; INTENSITY RATIOS; INTERBAND; LINE WIDTH VARIATIONS; LINE WIDTHS; PEAK FREQUENCIES; RAMAN SPECTRUM; SEMICONDUCTING DOUBLE-WALLED CARBON NANOTUBES; SITU RAMAN SCATTERINGS; TRANSFER CHARACTERISTICS;

CARRIER CONCENTRATION; ELECTRON ENERGY LOSS SPECTROSCOPY; FIELD EFFECT TRANSISTORS; HYSTERESIS; HYSTERESIS LOOPS; MESFET DEVICES; MULTIWALLED CARBON NANOTUBES (MWCN); RAMAN SCATTERING;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RAMAN SPECTROMETRY; STATISTICS; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; SPECTRUM ANALYSIS, RAMAN; STATISTICS AS TOPIC; SURFACE PROPERTIES;

EID: 61649107723     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803188g     Document Type: Article

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