Bridgman growth of Bi4Si3O12 scintillation crystals

Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society

Volumn 37, Issue 2, 2009, Pages 295-298

  Xu, Jiayue ^a,b   Wang, Hong ^b   He, Qingbo ^b   Shen, Hui ^b   Shimizu, Hajime ^c   Xiang, Weidong ^d  

^a SHANGHAI INSTITUTE OF TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c TOHOKU UNIVERSITY   (Japan)

^d WENZHOU UNIVERSITY   (China)

Author keywords

Bismuth silicate crystal; Bridgman technique; Crystal growth; Scintillator

Indexed keywords

BISMUTH; CRYSTAL GROWTH; CRYSTALLIZATION; GERMANIUM; GRAIN BOUNDARIES; SCINTILLATION; SCINTILLATION COUNTERS; SILICATES;

BISMUTH SILICATE CRYSTAL; BRIDGMAN GROWTHS; BRIDGMAN TECHNIQUE; CRYSTALLIZATION BEHAVIORS; DECAY TIME; ELECTROMAGNETIC CALORIMETERS; ENERGY REGIONS; HIGH TRANSMITTANCES; OPTICAL UNIFORMITIES; RECTANGULAR SHAPES; SCINTILLATION CRYSTALS; SCINTILLATOR;

LUMINESCENCE;

EID: 61649096859     PISSN: 04545648     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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