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Current, voltage characteristic as well as transient dark and photo-conductivity were measured using a 4155 Agilent semiconductor parameter analyzer
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61649115359
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For spectral responsivity measurements, a bias was applied to the sample connected in series with a 2 MΩ load resistor. Illumination was provided by a white light source (ScienceTech Inc. TH-2) dispersed by a Triax 320 monochromator and mechanically chopped at the frequency of interest. Optical filters were used to prevent grating overtones from illuminating the sample. The voltage across the load resistor was measured using a Stanford Research Systems SR830 lock-in amplifier. The intensity transmitted through the monochromator at each wavelength was precalibrated, and controlled via a variable attenuator, to be ∼500 nW/cm2. Photocurrent was then extracted by the ratio of the recorded voltage in the lock-in amplifier over the load resistor.
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For spectral responsivity measurements, a bias was applied to the sample connected in series with a 2 MΩ load resistor. Illumination was provided by a white light source (ScienceTech Inc. TH-2) dispersed by a Triax 320 monochromator and mechanically chopped at the frequency of interest. Optical filters were used to prevent grating overtones from illuminating the sample. The voltage across the load resistor was measured using a Stanford Research Systems SR830 lock-in amplifier. The intensity transmitted through the monochromator at each wavelength was precalibrated, and controlled via a variable attenuator, to be ∼500 nW/cm2. Photocurrent was then extracted by the ratio of the recorded voltage in the lock-in amplifier over the load resistor.
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* was obtained as a function of wavelength, applied bias, and center frequency by dividing the square root of the optically active area of the device by the NEP.
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* was obtained as a function of wavelength, applied bias, and center frequency by dividing the square root of the optically active area of the device by the NEP.
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