메뉴 건너뛰기




Volumn , Issue , 2005, Pages 1-303

Silicon RF Power Mosfets

Author keywords

[No Author keywords available]

Indexed keywords


EID: 61549096755     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1142/5725     Document Type: Book
Times cited : (29)

References (79)
  • 1
    • 85131970692 scopus 로고    scopus 로고
    • America Zooms in on Camera Phones
    • O. Crockett, “America Zooms in on Camera Phones”, Business Week, pp. 44-45, December 22, 2003.
    • (2003) Business Week , pp. 44-45
    • Crockett, O.1
  • 14
    • 85131994081 scopus 로고    scopus 로고
    • Introduction to 3G Mobile Communications
    • J. Korhonen, “Introduction to 3G Mobile Communications”, Artech House, 2001.
    • (2001) Artech House
    • Korhonen, J.1
  • 16
    • 26444511669 scopus 로고    scopus 로고
    • RF Power Amplifiers for Wireless Communications
    • S. C. Cripps, “RF Power Amplifiers for Wireless Communications”, Artech House, 1999.
    • (1999) Artech House
    • Cripps, S.C.1
  • 17
    • 85001229851 scopus 로고    scopus 로고
    • Feedforward Linear Power Amplifiers
    • N. Pothecary, “Feedforward Linear Power Amplifiers”, Artech House, 1999.
    • (1999) Artech House
    • Pothecary, N.1
  • 18
    • 85131994081 scopus 로고    scopus 로고
    • Introduction to 3G Mobile Communications
    • J. Korhonen, “Introduction to 3G Mobile Communications”, Artech House, 2001.
    • (2001) Artech House
    • Korhonen, J.1
  • 19
    • 85131991283 scopus 로고    scopus 로고
    • RF Power Amplifiers for Wireless Communications
    • C. Cripps, “RF Power Amplifiers for Wireless Communications”, Chapter 1, pp. 6-9, 1999.
    • (1999) Chapter , vol.1 , pp. 6-9
    • Cripps, C.1
  • 23
    • 85001229851 scopus 로고    scopus 로고
    • Feedforward Linear Power Amplifiers
    • N. Pothecary, “Feedforward Linear Power Amplifiers”, Artech House, 1999.
    • (1999) Artech House
    • Pothecary, N.1
  • 26
    • 26444511669 scopus 로고    scopus 로고
    • RF Power Amplifiers for Wireless Communications, Chapter 9
    • S. C. Cripps, “RF Power Amplifiers for Wireless Communications”, Chapter 9, pp. 263-267, Artech House, 1999.
    • (1999) Artech House , pp. 263-267
    • Cripps, S.C.1
  • 31
  • 34
    • 0016576617 scopus 로고
    • Electron and Hole Drift Velocity Measurements in Silicon
    • C. Canali, G. Majni, R. Minder, and G. Ottaviani, “Electron and Hole Drift Velocity Measurements in Silicon”, IEEE Trans. Electron Devices, Vol. ED-22, pp. 1045-1047, 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , pp. 1045-1047
    • Canali, C.1    Majni, G.2    Minder, R.3    Ottaviani, G.4
  • 38
    • 85131972280 scopus 로고    scopus 로고
    • Lateral DMOS gains on GaAs in Cellular Basestations
    • S. Ohr, “Lateral DMOS gains on GaAs in Cellular Basestations”, EE Times, February 10, 1999.
    • (1999) EE Times
    • Ohr, S.1
  • 39
    • 85131973012 scopus 로고    scopus 로고
    • Lateral-diffused MOS power transistors vie for poweramp sockets by improving efficiency, linearity, peak power, and costper-watt
    • A. Bindra, “Lateral-diffused MOS power transistors vie for poweramp sockets by improving efficiency, linearity, peak power, and costper-watt”, Electronic Design Magazine, Vol. 48, Number 3, February 7, 2000.
    • (2000) Electronic Design Magazine , vol.48 , Issue.3
    • Bindra, A.1
  • 43
    • 0032124057 scopus 로고    scopus 로고
    • Modeling and Characterization of an 80 V Silicon LDMOSFET for Emerging RFIC Applications
    • P. Perugupall, M. Trivedi, K. Shenai, and S.K. Leong, “Modeling and Characterization of an 80 V Silicon LDMOSFET for Emerging RFIC Applications”, IEEE Trans Electron Devices, Vol. ED-45, pp. 1468-1478,1998.
    • (1998) IEEE Trans Electron Devices , vol.ED-45 , pp. 1468-1478
    • Perugupall, P.1    Trivedi, M.2    Shenai, K.3    Leong, S.K.4
  • 44
    • 0142084945 scopus 로고    scopus 로고
    • LDMOS Transistor Powers PCS Base-Station Amplifiers
    • A. Wood, “LDMOS Transistor Powers PCS Base-Station Amplifiers”, Microwaves and RF, pp. 69-80, March 1998.
    • (1998) Microwaves and RF , pp. 69-80
    • Wood, A.1
  • 45
    • 0030422321 scopus 로고    scopus 로고
    • High efficiency LDMOS Power FET for Low Voltage Wireless Communications
    • G. Ma, W. Burger, and C. Dragon, “High efficiency LDMOS Power FET for Low Voltage Wireless Communications”, IEEE International Electron Devices Meeting, Abstract 4.3.1, pp. 91-94, 1996.
    • (1996) IEEE International Electron Devices Meeting , vol.4 , Issue.3-1 , pp. 91-94
    • Ma, G.1    Burger, W.2    Dragon, C.3
  • 46
    • 0036671132 scopus 로고    scopus 로고
    • “Effect of Temperature on High Power RF LDMOS Transistors
    • O. Lembeye and J-C. Nanan, “Effect of Temperature on High Power RF LDMOS Transistors, Applied Microwave and Wireless, pp. 36-43, August 2003.
    • (2003) Applied Microwave and Wireless , pp. 36-43
    • Lembeye, O.1    Nanan, J.-C.2
  • 53
    • 0021640247 scopus 로고
    • A 900 MHz VD-MOSFET with Silicide Gate Self-Aligned Channel
    • H. Esaki and O. Ishikawa, “A 900 MHz VD-MOSFET with Silicide Gate Self-Aligned Channel”, International Electron Devices Meeting, Abstract 16.6, pp. 447-450, 1984.
    • (1984) International Electron Devices Meeting , vol.16 , Issue.6 , pp. 447-450
    • Esaki, H.1    Ishikawa, O.2
  • 54
    • 0035445505 scopus 로고    scopus 로고
    • Theoretical Analysis and Experimental Characterization of the Dummy-Gate VDMOSFET
    • S. Xu, C. Ren, Y.C. Liang, P-D. Foo, and J.K.O. Sin, “Theoretical Analysis and Experimental Characterization of the Dummy-Gate VDMOSFET”, IEEE Transactions on Electron Devices, Vol. ED-48, pp. 2168-2176,2001.
    • (2001) IEEE Transactions on Electron Devices , vol.ED-48 , pp. 2168-2176
    • Xu, S.1    Ren, C.2    Liang, Y.C.3    Foo, P.-D.4    Sin, J.K.O.5
  • 55
    • 0021410080 scopus 로고
    • A New Vertical Double Diffused MOSFET - The Self-Aligned Terraced-Gate MOSFET
    • D. Ueda, H. Takagi, and G. Kano, “A New Vertical Double Diffused MOSFET - The Self-Aligned Terraced-Gate MOSFET”, IEEE Transactions on Electron Devices, Vol. ED-31, pp. 416-420, 1984.
    • (1984) IEEE Transactions on Electron Devices , vol.ED-31 , pp. 416-420
    • Ueda, D.1    Takagi, H.2    Kano, G.3
  • 56
    • 0020098824 scopus 로고
    • Semiconductors for High Voltage Vertical Channel Field Effect Transistors
    • B.J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, J. Applied Physics, Vol. 53, pp. 1759-1764, 1982.
    • (1982) J. Applied Physics , vol.53 , pp. 1759-1764
    • Baliga, B.J.1
  • 57
    • 0024749835 scopus 로고
    • Power Semiconductor Device Figure of Merit for High Frequency Applications
    • B.J. Baliga, “Power Semiconductor Device Figure of Merit for High Frequency Applications”, IEEE Electron Device Letters, Vol. EDL-10, pp.455-457, 1989.
    • (1989) IEEE Electron Device Letters , vol.EDL-10 , pp. 455-457
    • Baliga, B.J.1
  • 66
    • 85131972864 scopus 로고    scopus 로고
    • Improved Electrical and Thermal Performance of Ultra-thin RF LDMOS Power Transistors
    • “Improved Electrical and Thermal Performance of Ultra-thin RF LDMOS Power Transistors”, Agere Systems Website, March 2003.
    • (2003) Agere Systems Website
  • 74
    • 0024684021 scopus 로고
    • Drain-Engineered Hot-Electron-Resistant Devices Structures: A Review
    • J.J. Sanchez, K.K. Hsueh, and T.A. DeMassa, “Drain-Engineered Hot-Electron-Resistant Devices Structures: A Review”, IEEE Transactions on Electron Devices, Vol. ED-36, pp. 1125-1132, 1989.
    • (1989) IEEE Transactions on Electron Devices , vol.ED-36 , pp. 1125-1132
    • Sanchez, J.J.1    Hsueh, K.K.2    Demassa, T.A.3
  • 76
    • 0020208332 scopus 로고
    • Correlation between Substrate and Gate Currents in MOSFETs
    • S. Tam, P-K Ko, C. Hu, and R.S. Muller, “Correlation between Substrate and Gate Currents in MOSFETs”, IEEE Transactions on Electron Devices, Vol. ED-29, pp. 1740-1744, 1982.
    • (1982) IEEE Transactions on Electron Devices , vol.ED-29 , pp. 1740-1744
    • Tam, S.1    P-K Ko, C.H.2    Muller, R.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.