Determination of X-ray flux using silicon pin diodes

Journal of Synchrotron Radiation

Volumn 16, Issue 2, 2009, Pages 143-151

  Owen, Robin L ^a,b   Holton, James M ^c,d   Schulze Briese, Clemens ^a   Garman, Elspeth F ^e  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b DIAMOND LIGHT SOURCE LTD   (United Kingdom)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Absorbed dose; Flux determination; Macromolecular crystallography; Silicon pin diode

Indexed keywords

DIODES; LIGHT; LIGHT SOURCES; MACROMOLECULES; MINERALOGY; NONMETALS; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

ABSORBED DOSE; ACCURATE MEASUREMENTS; ADVANCED LIGHT SOURCES; BEAM-LINES; COMMUNITY IS; ENERGY DEPOSITIONS; HIGH QUALITIES; MACROMOLECULAR CRYSTALLOGRAPHY; P-I-N DIODES; PHOTON FLUXES; SILICON PIN DIODE; SIMPLE MODELS; SWISS LIGHT SOURCES; SWITZERLAND; WEB-BASED TOOLS; X-RAY FLUXES; X-RAY SOURCES;

X RAY CRYSTALLOGRAPHY;

SILICON;

ARTICLE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; RADIATION EXPOSURE; RADIOMETRY; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; THEORETICAL MODEL; VALIDATION STUDY; X RAY; X RAY CRYSTALLOGRAPHY;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; CRYSTALLOGRAPHY, X-RAY; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MODELS, THEORETICAL; RADIOMETRY; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SILICON; X-RAYS;

EID: 61449224696     PISSN: 09090495     EISSN: 16005775     Source Type: Journal    
DOI: 10.1107/S0909049508040429     Document Type: Article

References (26)

1. Alig, R. C. & Bloom, S. (1975). Phys. Rev. Lett. 35, 1522-1525.
2. Alkire, R. W. & Rotella, F. J. (1997). J. Appl. Cryst. 30, 327-332.
3. Bourenkov, G. P. & Popov, A. N. (2006). Acta Cryst. D62, 58-64.
4. Cho, T., Takahashi, E., Hirata, M., Yamaguchi, N., Teraji, T., Matsuda, K., Takeuchi, A., Kohagura, J., Yatsu, K., Tamano, T., Kondoh, T., Aoki, S., Zhang, X. W., Maezawa, H. & Miyoshi, S. (1992). Phys. Rev. A, 46, 3024-3027.
5. Cole, A. (1969). Radial Res. 38, 7-33.
6. Ellis, P. J., Cohen, A. E. & Soltis, S. M. (2003). J. Synchrotron Rad. 10, 287-288.
7. Gerlach, M., Krumrey, M., Cibik, L., Mür, P. & Ulm, G. (2007). Nucl. Instrum. Methods Phys. Res. A, 580, 218-221. González, A., Moorhead, P., McPhillips, S. E., Song, J., Sharp, K.,
8. Taylor, J. R., Adams, P. D., Sauter, N. K. & Soltis, S. M. (2008). J. Appl. Cryst. 41, 176-184.
9. Gullikson, E., Gramsch, E. & Szawiowski, M. (1995). Appl. Opt. 34, 4662-4668.
10. Henderson, R. (1990). Proc. R. Soc. London B, 241, 6-8.
11. Jach, T. & Cowan, P. L. (1983). Nucl. Instrum. Methods Phys. Res. 208, 423-425.
12. Kocsis, M. & Somogyi, A. (2003). J. Synchrotron Rad. 10, 187-190.
13. Krumrey, M., Gerlach, M., Scholze, F. & Ulm, G (2006). Nucl. Instrum. Methods Phys. Res. A, 568, 364-368.
14. Leiros, H.-K. S., Timmins, J., Ravelli, R. B. G. & McSweeney, S. M. (2006). Acta Cryst. D62, 125-132.
15. Lucke, R. (1976). Rev. Sci. Instrum. 47, 766-767.
16. Lutz, G. (1999). Semiconductor Radiation Detectors. Berlin/Heidelberg/New York: Springer.
17. Murray, J. W., Garman, E. F. & Ravelli, R. B. G. (2004). J. Appl. Cryst. 37, 513-522.
18. Nariyama, N. (2004). Rev. Sci. Instrum. 75, 2860-2862.
19. Nariyama, N. (2006). Phys. Med. Biol. 51, 5199-5209.
20. Owen, R. L., Rudino-Pinera, E. & Garman, E. F. (2006). Proc. Nat. Acad. Sci. 103, 4912-4917.
21. Paithankar, K., Owen, R. B. G. & Garman, E. F. (2009). J. Synchrotron Rad. 16, 152-162.
22. Ravelli, R. B. G. & Garman, E. F. (2006). Curr. Opin. Struct. Biol. 16, 624-629.
23. Scholze, F., Henneken, H., Kuschnerus, P., Rabus, H., Richter, M. & Ulm, G. (2000). Nucl. Instrum. Methods Phys. Res. A, 439, 208-215.
24. Sliz, P., Harrison, S. & Rosenbaum, G. (2003). Structure, 11, 13-19.
25. Snell, E. H., Bellamy, H. D., Rosenbaum, G & van der Woerd, M. J. (2007). J. Synchrotron Rad. 14, 109-115.
26. Wyckof, H. O. (1979). Editor. Average Energy Required to Produce an Ion Pair. ICRU Report 31. International Commission on Radiation Units and Measurements, 7910 Woodmont Avenue, Suite 400, Bethesda, MD 20814-3095, USA.