Resputtering of zinc oxide films prepared by radical assisted sputtering

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Song, Qiuming ^a,c   Wu, Bingjun ^a   Xie, Bin ^a   Huang, Feng ^a   Li, Ming ^a   Wang, Haiqian ^a   Jiang, Yousong ^b   Song, Yizhou ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Shincron Co Ltd   (Japan)

^c SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FILM PREPARATION; OXIDATION; OXYGEN; SPUTTERING; ZINC; ZINC OXIDE;

CONCENTRATION OF; DEPOSITED FILMS; DEPOSITION PROCESS; GROWING FILMS; LOSS MECHANISMS; MAGNETRON SPUTTERING SYSTEMS; NEGATIVE OXYGEN IONS; OXIDATION DEGREES; OXYGEN CONCENTRATIONS; RE-SPUTTERING; SPUTTERING PROCESS; SPUTTERING RATES; SPUTTERING THRESHOLD ENERGIES; ZINC OXIDE FILMS;

OXIDE FILMS;

EID: 61449145584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082039     Document Type: Article

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