Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenide

Journal of Electronic Materials

Volumn 25, Issue 2, 1996, Pages 223-227

  Suda, Jun ^a   Tsuka, Masanori ^a   Honda, Daisuke ^a   Funato, Mitsuru ^a   Kawakami, Yoichi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deep level transient spectroscopy (DLTS); Dimethylselenide (DMSe); Metalorganic molecular beam epitaxy (MOMBE); Nitrogen doping; Photoluminescence (PL); ZnSe

Indexed keywords

EID: 6144222165     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666248     Document Type: Article

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