Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 276-278

  Rao, Feng ^a   Song, Zhitang ^a   Wu, Liangcai ^a   Gong, Yuefeng ^a   Feng, Songlin ^a   Chen, Bomy ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Ge2Sb2Te5; Phase change memory; Sb2Te3; TiN

Indexed keywords

FLASH MEMORY; GERMANIUM; SEMICONDUCTOR STORAGE; TELLURIUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

DATA ENDURANCES; DATA STORAGES; DOUBLE LAYERS; GE2SB2TE5; INTER DIFFUSIONS; PHASE CHANGE MEMORY CELLS; RESISTANCE STATE; SB2TE3; TIN FILMS; TIN LAYERS;

PHASE CHANGE MEMORY;

EID: 61349193756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.12.003     Document Type: Article

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