High-performance metal-insulator-metal capacitor using quality properties of high- κ TiPrO dielectric

Journal of the Electrochemical Society

Volumn 156, Issue 4, 2009, Pages

  Huang, Chingchien ^a,b   Cheng, Chun Hu ^b   Lee, Ko Tao ^c   Liou, Bo Heng ^d  

^a Department of Electrical Engineering ^*

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTROLYTIC CAPACITORS; INDUSTRIAL MANAGEMENT; INTEGRATED CIRCUITS; IRIDIUM; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; TECHNOLOGICAL FORECASTING;

ANNEAL TEMPERATURES; CAPACITANCE DENSITIES; HIGH DENSITIES; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LOW-LEAKAGE CURRENTS; MATERIAL CHARACTERISTICS; METAL-INSULATOR-METAL CAPACITORS; QUALITY PROPERTIES; WORK-FUNCTION;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 61349130155     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3073549     Document Type: Article

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