Effects of film thickness on manganite film-based heterjunctions

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Lu W M ^a   Wei, A D ^a   Sun, J R ^a   Chen, Y Z ^a   Shen, B G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; LANTHANUM; MAGNETIC FILMS; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; NIOBIUM; OXIDE MINERALS; STRONTIUM ALLOYS; THERMIONIC EMISSION;

INTERFACIAL BARRIERS; LATTICE STRAINS; LINEAR RELATIONS; MANGANITE FILMS; NB JUNCTIONS; PHOTORESPONSE; TRANSPORT BEHAVIORS;

FILM GROWTH;

EID: 61349120647     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089698     Document Type: Article

References (14)

1. M. Sugiura, K. Uragou, M. Noda, M. Tachiki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.38.2675 38, 2675 (1999).
2. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2001).
3. J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1664032 84, 1528 (2004).
4. J. R. Sun, B. G. Shen, Z. G. Sheng, and Y. P. Sun, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1806560 85, 3375 (2004); Z. G. Sheng, B. C. Zhao, W. H. Song, Y. P. Sun, J. R. Sun, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2140878 87, 242501 (2005).
5. Colossal Magnetoresistive Oxides, edited by, Y. Tokura, (Gordon and Breach, London, 1999).
6. M. Huijben, L. W. Martin, Y. -H. Chu, M. B. Holcomb, P. Yu, G. Rijnders, D. H. A. Blank, and R. Ramesh, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.78.094413 78, 094413 (2008); Y. Tokura and N. Nagaosa, Science SCIEAS 0036-8075 10.1126/science.288.5465.462 288, 462 (2000).
7. Y. Z. Chen, J. R. Sun, S. Liang, W. M. Lu, and B. G. Shen, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3035914 104, 113913 (2008).
8. The LCMO compound is of Pnma symmetry, and its lattice parameters are a=0.5457 nm, b=0.7711 nm, and c=0.5472 nm. The lattice constants of a/√2, b/2, and c/√2, the ones for idealized perovskite structure, were used here. The in-plane lattice constant of LCMO will be that of SrTiO3 (0.3905 nm) as t→0.
9. P. Orgiani, A. Yu. Petrov, C. Adamo, C. Aruta, C. Barone, G. M. De Luca, A. Galdi, M. Polichetti, D. Zola, and L. Maritato, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.134419 74, 134419 (2006).
10. S. Jin, G. Gao, W. Wu, and X. Zhou, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/40/2/003 40, 305 (2007).
11. P. C. Newman, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19650239 1, 265 (1965).
12. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
13. R. H. Fowler, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.38.45 38, 45 (1931).
14. M. Bibes, S. Valencia, L. Balcells, B. Martínez, J. Fontcuberta, M. Wojcik, S. Nadolski, and E. Jedryka, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.134416 66, 134416 (2002).