Resist cluster formation model and development simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 472-483

  Kamon, Kazuya ^a   Nakazawa, Keisuke ^a   Yamaguchi, Atsuko ^a   Matsuzawa, Nobuyuki N ^a   Ohfuji, Takeshi ^a   Sasago, Masaru ^a   Kanzaki, Ken Ichi ^b   Tagawa, Seiichi ^b  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Chemically amplified resist; Free volume; Modified illumination; MULSS; Optical proximity correction; PEB; PED; Percolation theory; PHALCOM; PHOENEX; Photolithography; Super resolution technique

Indexed keywords

ACTIVE NETWORKS; CATALYSIS; DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; EQUATIONS OF STATE; GELATION; KRYPTON; MOLECULAR INTERACTIONS; MOLECULAR STRUCTURE; OPTICAL RESOLVING POWER; PERCOLATION (FLUIDS); PERCOLATION (SOLID STATE); PHOTORESISTORS; PHOTORESISTS; SOLVENTS; SURFACE ROUGHNESS;

CHEMICALLY AMPLIFIED RESIST; MODIFIED ILLUMINATION; MULSS; OPTICAL PROXIMITY CORRECTION; PEB; PED; PERCOLATION THEORY; PHALCOM; PHOENEX; SUPER RESOLUTION TECHNIQUE;

FORMING;

EID: 60849085203     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312343     Document Type: Conference Paper

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