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Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

Dielectric relaxation properties of nanostructured Ce0.8Gd 0.1Pr0.1O2-δ material at intermediate temperatures

(2) Baral, Ashok Kumar a Sankaranarayanan, V a

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; GADOLINIUM; NANOCRYSTALLINE MATERIALS; OXYGEN; OXYGEN VACANCIES;

ASSOCIATION ENERGIES; DEFECT PAIRS; DIELECTRIC RELAXATION BEHAVIORS; DOPED CERIAS; INTERMEDIATE TEMPERATURES; MIGRATION ENERGIES; NANO-CRYSTALLINE; NANO-STRUCTURED; TEMPERATURE RANGES; THEORETICAL PREDICTIONS;

CERIUM COMPOUNDS;

EID: 60749099160 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3083556 Document Type: Article

Times cited : (24)

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