Comparison of PN diodes and FETs as phase change memory (PCM) driving devices

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 928-931

  Li, N ^a   Lu, Kailiang ^a   Kwong, K C ^a   He, Jin ^a,b   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3-D DEVICE SIMULATIONS; CROSS TALKS; CROSS-SECTIONAL AREAS; CURRENT DRIVINGS; CURRENT FLOWS; DRIVING DEVICES; EXPERIMENTAL DATUM; GATE-ALL-AROUND; MOSFETS; P-N DIODES; PHASE-CHANGE MEMORIES; PROGRAMMING CURRENTS; TECHNOLOGY NODES;

DIODES; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; INTEGRATED CIRCUITS; MESFET DEVICES; MOSFET DEVICES; NANOTECHNOLOGY; PULSE CODE MODULATION; TECHNOLOGY;

PHASE CHANGE MEMORY;

EID: 60649109687     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734686     Document Type: Conference Paper

References (5)

1. Semiconductor Industry Assoc., International Technology Roadmap for Semiconductors, 2007 Edition.
2. J. H. Oh et. al., I EDM, (2006).
3. F. Bedeschi et. al., IEEE, p. 207 (2004).
4. K. Lu et. al., VLSI-TSA, p. 135 (2008).
5. B. G. Streetman et. al., Prentice Hall, Fifth Edition, Chapter 4, p. 129 (2000).