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Volumn 22, Issue 1-3, 2009, Pages 87-90
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The <00l>-oriented growth of Cu2S films and its switching properties
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Author keywords
Film growth; Solid state electrolyte; Switching property
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Indexed keywords
ANNEALING;
ELECTRODEPOSITION;
ELECTROLYTES;
FILM GROWTH;
GRAIN BOUNDARIES;
MOLECULAR BEAM EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SILICON COMPOUNDS;
ANNEALING TEMPERATURES;
AVERAGE SIZES;
HIGH TEMPERATURES;
MEMORY UNITS;
ORDERS OF MAGNITUDES;
ORIENTED GROWTHS;
ROOM TEMPERATURES;
SI(111) SUBSTRATES;
SOLID STATE ELECTROLYTE;
SWITCHING PROPERTY;
VACUUM CHAMBERS;
X- RAY DIFFRACTIONS;
COPPER;
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EID: 60649098849
PISSN: 13853449
EISSN: 15738663
Source Type: Journal
DOI: 10.1007/s10832-007-9391-0 Document Type: Article |
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Times cited : (7)
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References (10)
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