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Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

Metal-insulator transition induced by postdeposition annealing in low doped manganite films

(5) Sirena, M a Haberkorn, N a Granada, M a Steren, L B a Guimpel, J a

a INSTITUTO BALSEIRO (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MAGNETIC PROPERTIES; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXIDE MINERALS; OXYGEN; OXYGENATION; OXYGENATORS; SEMICONDUCTOR INSULATOR BOUNDARIES;

DOPED MANGANITES; EDGE CROSSINGS; ELECTRICAL RESISTIVITIES; EXPANSIVE STRAINS; FERMI ENERGIES; METAL-INSULATOR TRANSITIONS; OXYGEN CONTENTS; OXYGEN PRESSURES; POST-DEPOSITION ANNEALING; REMNANT MAGNETIZATIONS; SR-DOPING; STRAIN FIELDS; TRANSPORT AND MAGNETIC PROPERTIES;

OXYGEN VACANCIES;

EID: 60449090191 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3073894 Document Type: Article

Times cited : (22)

References (15)

1
- 79956038656
- 0003-6951 10.1063/1.1470244.
- V. G. Prokhorov, G. G. Kaminsky, V. A. Komashko, Y. P. Lee, J. S. Park, and H. C. Ri, Appl. Phys. Lett. 0003-6951 10.1063/1.1470244 80, 2707 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2707
- Prokhorov, V.G.¹ Kaminsky, G.G.² Komashko, V.A.³ Lee, Y.P.⁴ Park, J.S.⁵ Ri, H.C.⁶

2
- 0342841971
- 0003-6951 10.1063/1.117573.
- W. Zhang, W. Boyd, M. Elliot, and W. Herrenden-Harkerand, Appl. Phys. Lett. 0003-6951 10.1063/1.117573 69, 3929 (1996).
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3929
- Zhang, W.¹ Boyd, W.² Elliot, M.³ Herrenden-Harkerand, W.⁴

3
- 0000442072
- 0003-6951 10.1063/1.122080.
- J. -M. Liu and C. K. Ong, Appl. Phys. Lett. 0003-6951 10.1063/1.122080 73, 1047 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1047
- Liu, J.-M.¹ Ong, C.K.²

4
- 3042985775
- 0163-1829 10.1103/PhysRevB.53.3348.
- R. Mahendiran, S. K. Tiwary, A. K. Raychaudhuri, and T. V. Ramakrishnan, Phys. Rev. B 0163-1829 10.1103/PhysRevB.53.3348 53, 3348 (1996).
- (1996) Phys. Rev. B , vol.53 , pp. 3348
- Mahendiran, R.¹ Tiwary, S.K.² Raychaudhuri, A.K.³ Ramakrishnan, T.V.⁴

5
- 0001737024
- 0021-8979 10.1063/1.372291.
- W. Wu, K. H. Wong, X. -G. Li, C. L. Choy, and Y. H. Zhang, J. Appl. Phys. 0021-8979 10.1063/1.372291 87, 3006 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 3006
- Wu, W.¹ Wong, K.H.² Li, X.-G.³ Choy, C.L.⁴ Zhang, Y.H.⁵

6
- 17044389258
- 0003-6951 10.1063/1.122549.
- M. Rajeswari, R. Shreekala, A. Goyal, S. E. Lofland, S. M. Bhagat, K. Ghosh, and T. Boettcher, Appl. Phys. Lett. 0003-6951 10.1063/1.122549 73, 2672 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2672
- Rajeswari, M.¹ Shreekala, R.² Goyal, A.³ Lofland, S.E.⁴ Bhagat, S.M.⁵ Ghosh, K.⁶ Boettcher, T.⁷

7
- 2642516459
- 0003-6951
- X. D. Zhu, W. Si, X. X. Xi, Q. Li, Q. D. Jiang, and M. G. Medici, Appl. Phys. Lett. 74, 3530 (1999). 0003-6951
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3530
- Zhu, X.D.¹ Si, W.² Xi, X.X.³ Li, Q.⁴ Jiang, Q.D.⁵ Medici, M.G.⁶

8
- 3543105338
- 0003-6951 10.1063/1.120427.
- A. Goyal, M. Rajeswari, R. Shreekala, S. E. Lofland, S. M. Bhagat, T. Boettcher, C. Kwon, R. Ramesh, and T. Venkatesan, Appl. Phys. Lett. 0003-6951 10.1063/1.120427 71, 2535 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2535
- Goyal, A.¹ Rajeswari, M.² Shreekala, R.³ Lofland, S.E.⁴ Bhagat, S.M.⁵ Boettcher, T.⁶ Kwon, C.⁷ Ramesh, R.⁸ Venkatesan, T.⁹

9
- 0036573682
- 0163-1829 10.1103/PhysRevB.65.174402.
- X. J. Chen, S. Soltan, H. Zhang, and H. -U. Habermeier, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65.174402 65, 174402 (2002).
- (2002) Phys. Rev. B , vol.65 , pp. 174402
- Chen, X.J.¹ Soltan, S.² Zhang, H.³ Habermeier, H.-U.⁴

10
- 0035894078
- 0021-8979 10.1063/1.1416866.
- J. Zhang, H. Tanaka, and T. Kawai, J. Appl. Phys. 0021-8979 10.1063/1.1416866 90, 6275 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 6275
- Zhang, J.¹ Tanaka, H.² Kawai, T.³

11
- 4244101029
- 0163-1829 10.1103/PhysRevB.51.14103.
- A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51.14103 51, 14103 (1995).
- (1995) Phys. Rev. B , vol.51 , pp. 14103
- Urushibara, A.¹ Moritomo, Y.² Arima, T.³ Asamitsu, A.⁴ Kido, G.⁵ Tokura, Y.⁶

12
- 0034262869
- 0040-6090 10.1016/S0040-6090(00)01113-5.
- M. Sirena, L. B. Steren, and J. Guimpel, Thin Solid Films 0040-6090 10.1016/S0040-6090(00)01113-5 373, 102 (2000).
- (2000) Thin Solid Films , vol.373 , pp. 102
- Sirena, M.¹ Steren, L.B.² Guimpel, J.³

13
- 0033888650
- 0304-8853 10.1016/S0304-8853(99)00709-X.
- L. B. Steren, M. Sirena, and J. Guimpel, J. Magn. Magn. Mater. 0304-8853 10.1016/S0304-8853(99)00709-X 211, 28 (2000).
- (2000) J. Magn. Magn. Mater. , vol.211 , pp. 28
- Steren, L.B.¹ Sirena, M.² Guimpel, J.³

14
- 33751116771
- C. Zener, Phys. Rev. 81, 440 (1951).
- (1951) Phys. Rev. , vol.81 , pp. 440
- Zener, C.¹

15
- 0030565378
- 0031-9007 10.1103/PhysRevLett.77.2041.
- H. Hwang, S. W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.2041 77, 2041 (1996).
- (1996) Phys. Rev. Lett. , vol.77 , pp. 2041
- Hwang, H.¹ Cheong, S.W.² Ong, N.P.³ Batlogg, B.⁴

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