Stability of de superconducting quantum interference devices fabricated using ramp-edge superconductor/normal-metal/superconductor technology

Applied Physics Letters

Volumn 71, Issue 12, 1997, Pages 1721-1723

  Jia, Q X ^a   Reagor, D ^a   Mombourquette, C ^a   Fan, Y ^a   Decker, J ^b   D'Alessandris, P ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b MONROE COMMUNITY COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DEPOSITION; ELECTRIC RESISTANCE; JOSEPHSON JUNCTION DEVICES; OPTIMIZATION; PERFORMANCE; PULSED LASER APPLICATIONS; THERMODYNAMIC STABILITY;

ELECTRICAL STRESS; JUNCTION RESISTANCE; PEAK TO PEAK VOLTAGE MODULATION; TRANSFER FUNCTION;

SQUIDS;

EID: 6044235442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120015     Document Type: Article

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