Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film transistor structures

Applied Physics Letters

Volumn 68, Issue 22, 1996, Pages 3135-3137

  Park, Hyuk Ryeol ^a   Oh, Dong Sun ^a   Jang, Jin ^b  

^a Mokpo National University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 6044227596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115802     Document Type: Article

References (11)

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