DC and AC conductivities of (As2S3)100-x(AsSe 0.5Te0.5I)x chalcogenide glasses

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2578-2583

  Lukic S R ^a   Skuban, S J ^a   Skuban, F ^a   Petrovic D M ^a   Tver'yanovich, A S ^b  

^a UNIVERSITY OF NOVI SAD   (Serbia)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

Chalcogenide glass; Conduction activation energy; Electrical conductivity

Indexed keywords

ARSENIC; CHARGE CARRIERS; CHEMICAL ACTIVATION; ELECTRIC CONDUCTIVITY; FERMI LEVEL; FERMIONS; GLASS; GLASS TRANSITION; HEAT CONDUCTION; PROBABILITY DENSITY FUNCTION; TELLURIUM COMPOUNDS;

AC CONDUCTIVITIES; ARRHENIUS; BAND TAILS; CHALCOGENIDE GLASS; CONDUCTION ACTIVATION ENERGY; DC CONDUCTIVITIES; DEFECT STATE; ELECTRICAL CONDUCTIONS; ELECTRICAL CONDUCTIVITY; FUNCTION OF FREQUENCIES; GLASS TRANSITION TEMPERATURES; HIGHER FREQUENCIES; LOCALIZED STATE; PRE-EXPONENTIAL FACTORS; ROOM TEMPERATURES;

ACTIVATION ENERGY;

EID: 60349132385     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.01.038     Document Type: Article

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