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Physical Review Letters

Volumn 102, Issue 4, 2009, Pages

Influence of magnetic dopants on the metal-insulator transition in semiconductors

(4) Teubert, J a Obukhov, S A b Klar, P J a Heimbrodt, W c

a JUSTUS LIEBIG UNIVERSITY (Germany)

b IOFFE INSTITUTE (Russian Federation)

c PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; ELECTRIC RESISTANCE; GERMANIUM; HYDROSTATIC PRESSURE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; SPIN DYNAMICS;

ANTIFERROMAGNETIC ALIGNMENTS; CORRELATION EFFECTS; HOLE SPINS; MAGNETIC DOPANTS; METAL-INSULATOR TRANSITIONS; NEGATIVE MAGNETO RESISTANCES; PERCOLATION PATHS; STRONG ENHANCEMENTS;

METAL INSULATOR TRANSITION;

EID: 60349106686 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.046404 Document Type: Article

Times cited : (13)

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