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Journal of Experimental and Theoretical Physics

Volumn 107, Issue 6, 2008, Pages 1022-1026

Mobility of charge carriers in porous silicon layers

(6) Forsh, P A a Martyshov, M N a Latysheva, A P a Vorontsov, A S a Timoshenko, V Yu a Kashkarov, P K a

a MOSCOW STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CARRIER CONCENTRATION; CARRIER MOBILITY; CIVIL AVIATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; NONMETALS; POROUS SILICON;

BARRIER HEIGHTS; CONCENTRATION OF; DONOR AND ACCEPTORS; DONOR MOLECULES; ELECTRICAL CONDUCTIVITIES; FREE CARRIERS; FREE CHARGE CARRIERS; IR ABSORPTION SPECTRUM; JOINT MEASUREMENTS; LOCAL ELECTRIC FIELDS; P TYPES; POROUS SILICON LAYERS; POTENTIAL BARRIERS; SILICON NANOCRYSTALS;

CHARGE CARRIERS;

EID: 60349090214 PISSN: 10637761 EISSN: None Source Type: Journal
DOI: 10.1134/S106377610812011X Document Type: Article

Times cited : (5)

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