Fabrication of silicon-oxide thin film by using ionized physical vapor deposition and application to gate insulators in transparent thin-film transistors

Journal of the Korean Physical Society

Volumn 54, Issue 1 PART 2, 2009, Pages 473-477

  Cheong, Woo Seok ^a   Hwang, Chi Sun ^a   Shin, Jae Heon ^a   Park, Sang Hee Ko ^a   Yoon, Sung Min ^a   Cho, Doo Hee ^a   Ryu, Minki ^a   Byun, Chun Won ^a   Yang, Shinhyuk ^a   Chu, Hye Yong ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Ionized physical vapor deposition; IPVD; Silicon oxide; Transparent thin film transistor

Indexed keywords

EID: 60049092654     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.473     Document Type: Conference Paper

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