Effect of Al doping on the magnetic and electrical properties of layered perovskite La1.3Sr1.7Mn2-xAlxO7

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2614-2617

  Han, L A ^a   Chen, C L ^a   Dong, H Y ^a   Wang, J Y ^a   Gao, G M ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Electrical property; Layered perovskite; Magnetic property; Magnetoresistance

Indexed keywords

ALUMINUM; ANTIFERROMAGNETISM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FOURIER TRANSFORMS; LANTHANUM; LANTHANUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETISM; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTOR INSULATOR BOUNDARIES; THREE DIMENSIONAL;

AL CONCENTRATIONS; AL CONTENTS; AL SUBSTITUTIONS; AL-DOPING; ANISOTROPIC INTERACTIONS; ANTIFERROMAGNETIC STATE; COMPLEX TRANSITIONS; DOUBLE EXCHANGE INTERACTIONS; ELECTRICAL PROPERTY; FERROMAGNETIC STATE; LAYERED MANGANESE OXIDES; LAYERED PEROVSKITE; MAGNETIC AND ELECTRICAL PROPERTIES; MAGNETIC PROPERTY; METAL-INSULATOR TRANSITIONS; METALLIC CONDUCTIONS; SHORT-RANGE FERROMAGNETIC ORDERS; TWO-DIMENSIONAL;

MAGNETIC MATERIALS;

EID: 60049091302     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.01.023     Document Type: Article

References (16)

1. Coey J.M.D., and Viret M. Adv. Phys. 48 (1999) 167
2. Schiffer P., Ramirez A.P., Bao W., and Cheong S.-W. Phys. Rev. Lett. 75 (1995) 3336
3. Kimura T., Tomioka Y., Kuwahara H., Asamitsu A., Tamura M., and Tokura Y. Science 274 (1996) 1698
4. Zhu H., Xu X.J., Ruan K.Q., and Zhang Y.H. Phys. Rev. B 65 (2002) 104424
5. Onose Y., He J.P., Kanako Y., Anima T., and Tokura Y. Appl. Phys. Lett. 86 (2005) 242502
6. Perring T.G., Aeppli G., Moritomo Y., and Tokura Y. Phys. Rev. Lett. 78 (1997) 3197
7. Si J.W., Cao Q.Q., Gu B.X., and Du Y.W. Chin. Phys. 14 (2005) 2117
8. Feng J., Che P., Wang J.P., Liu M.F., Cao X.Q., and Meng J. J. Alloys Compd. 397 (2005) 220
9. Biswas S., Chatterjee S., Chatterjee P., Dutta P., Joshi A.G., Nigam A.K., De S.K., and Chatterjee S. Phys. Rev. B 66 (2002) 214403
10. Zhang R.L., Zhao B.C., Song W.H., Ma Y.Q., Yang J., Sheng Z.G., Dai J.M., and Sun Y.P. J. Appl. Phys. 96 (2004) 4965
11. Rao C.N.R., Cheetam A.K., and Mahesh R. Chem. Mater. 8 (1996) 2421
12. Mahesh R., Mahendiran R., Raychaudhuri A.K., and Rao C.N.R. J. Solid State Chem. 122 (1996) 448
13. Basith M.A., Manjura Hoque Sk., Shahparan Md., Hakim M.A., and Huq M. Physica B 395 (2007) 126
14. Kimura T., Asamitsu A., Tomioka Y., and Tokura Y. Phys. Rev. Lett. 79 (1997) 3720
15. Argyriou D.N., Kelley T., Mitchell J.F., Robinson R.A., Osborn R., Rozenkrantz S., Sheldon R.I., and Jorgensen J.D. J. Appl. Phys. 83 (1997) 6374
16. Blasco J., Garcia J., de Tersa J.M., Ibarra M.R., Perez J., Algarabel P.A., Marquina C., and Ritter C. Phys. Rev. B 55 (1997) 8905