Interface dependent electrical properties of amorphous InGaZn O 4 thin film transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 126-129

  Lim, Wantae ^a   Jang, Jung Hun ^a   Kim, S H ^a   Norton, D P ^a   Craciun, V ^a   Pearton, S J ^a   Ren, F ^a   Chen, H ^b  

^a University of Florida   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPORS; CURRENT VOLTAGES; DIELECTRIC INTERFACES; ELECTRICAL PROPERTIES; FILM COMPOSITIONS; GATE DIELECTRIC FILMS; INTERFACIAL ROUGHNESS; SATURATION MOBILITIES; SUB THRESHOLDS; TRAP DENSITIES; VOLTAGE SWINGS;

AMORPHOUS SILICON; DIELECTRIC FILMS; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILANES; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59949088229     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3058717     Document Type: Article

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