Luminescence properties of Eu2+-doped β-Si6-zAlzOzN8-z microcrystals fabricated by gas pressured reaction

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 878-882

  Ho Ryu, Jeong ^a   Park, Youn Gon ^a   Sik Won, Hyong ^a   Hyun Kim, Sang ^a   Suzuki, Hideo ^a   Yoon, Chulsoo ^a  

^a Samsung SDI   (South Korea)

Author keywords

A1. Luminescence; A2. Gas pressured reaction; B1. Oxynitrides; B2. Phosphors

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); EUROPIUM; GASES; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; MICROCRYSTALS; PHOSPHORS; SEMICONDUCTING SILICON COMPOUNDS;

A1. LUMINESCENCE; A2. GAS PRESSURED REACTION; AL-DOPING; B1. OXYNITRIDES; B2. PHOSPHORS; CRYSTALLINITY; DOPING CONCENTRATIONS; EMISSION INTENSITIES; INTENSE EMISSIONS; LIGHT EMITTING DIODE LEDS; LUMI-NESCENT PROPERTIES; LUMINESCENCE PROPERTIES; OPTIMAL CONDITIONS; PEAK WAVELENGTHS; PHASE PURITIES; PHOSPHOR CRYSTALS; POLYTYPOID; SPECTRAL RANGES; UV-VISIBLE; Z VALUES;

LIGHT EMISSION;

EID: 59749100538     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.107     Document Type: Article

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