Bistability in voltage-biased normal-metal/insulator/superconductor/ insulator/normal-metal structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 1, 2009, Pages

  Snyman, I ^a,b   Nazarov, Yu V ^c  

^a National Institute for Theoretical Physics   (South Africa)

^b UNIVERSITEIT LEIDEN   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 59649126212     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.014510     Document Type: Article

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36. cf. Eqs. (36) and (37) of Ref..
37. While our numerical scheme breaks down when 0< ETh ≪ Δ0, it is again possible to do numerics when the system is perfectly isolated, i.e., when ETh is strictly zero.