TEM analysis of planar defects in β-SiC

International Journal of Refractory Metals and Hard Materials

Volumn 27, Issue 2, 2009, Pages 443-448

  Olivier, E J ^a   Neethling, J H ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

SiC; Defects; Stacking faults; TEM; Twins

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; DIFFRACTION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLOGRAPHIC INTERFEROMETRY; MOSFET DEVICES; PROGRAMMING THEORY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ANOMALOUS ABSORPTIONS; BLOCH WAVES; BRIGHT FIELDS; DARK FIELDS; DYNAMICAL THEORIES; EXTENDED DEFECTS; EXTRINSIC STACKING FAULTS; HIGH RESOLUTIONS; LATTICE DEFECTS; PLANAR DEFECTS; SELECTED AREA DIFFRACTION PATTERNS; SI(0 0 1); TEM; TRANSMISSION ELECTRONS; TWINS;

STACKING FAULTS;

EID: 59649107158     PISSN: 02634368     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijrmhm.2008.09.013     Document Type: Article

References (23)

1. Pirouz P., Chorey C.M., Cheng T.T., and Powell J.A. Lattice defects in β-SiC grown epitaxially on silicon substrates. Mat Res Soc Symp Proc 91 (1987) 399
2. Pirouz P., Chorey C.M., Cheng T.T., and Powell J.A. Microscopy of epitaxially grown β-SiC on {0 0 1} silicon. Proc Microsc Semicond Mater Conf 87 (1987) 175
3. Head AK, Humble P, Clarebrough LM, Morton AJ, Forwood CT. Computed electron micrographs and defect identification. In: Amelinckx S, Gevers R, Nihoul J, editors. Defects in crystalline solids, vol. 7. North-Holland, Amsterdam; 1973.
4. De Graef M. Introduction to conventional electron microscopy. 1st ed. (2003), Cambridge University Press
5. Hirsch P.B., Howie A., Nicholson R.B., Whelan M.J., and Pashley D.W. Electron microscopy of thin crystals. 1st ed. (1965), Butterworth, London
6. Stoemenos J., Syväjärvi M., Yakimova R., and Polychroniadis E. Microstructural characterization of very thick freestanding 3C-SiC wafers. J Cryst Growth 263 (2004) 68
7. Lindefelt U., Iwata H., Öberg S., and Briddon P.R. Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method. Phys Rev B 67 (2003) 155204
8. Jacob C., Teker K., Chung J., and Hong M.H. Epitaxial growth of 3C-SiC on Si(0 0 1) using hexamethyldisilane and comparison with growth on Si(1 1 1). Thin Solid Films 371 (2000) 53
9. Yano T., Miyazaki H., Akiyoshi M., and Iseki T. X-ray diffractometry and high-resolution electron microscopy of neutron-irradiated SiC to a fluence of 1.9. J Nucl Mater 253 (1998) 78
10. 29Si implanted ions in SiC. Mater Sci Eng B11 (1992) 331
11. Iwata H., Lindefelt U., Öberg S., and Briddon P.R. Stacking faults in silicon carbide. Mater Sci For 439 (2003) 389-393
12. Iwata H., Lindefelt U., Öberg S., and Briddon P.R. Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method. Physica B 165 (2003) 340-342
13. Denteneer P.J.H., and van Haeringen W. Stacking-fault energies in semiconductors from first-principles calculations. J Phys C: Solid State Phys 20 (1987) L883
14. Denteneer PJH. Atomic scale calculations in materials science. In: Tersoff J, Vanderbilt D, Vitek V, editors. MRS symp proc, vol. 141. 1989. p. 343.
15. Käckell P., Furthmüller J., and Bechstedt F. Polytypic transformations in SiC: an ab initio study. Phys Rev B 58 (1998) 1326
16. Harris GL. Density of SiC. In: Harris GL, editor. Properties of silicon carbide. EMIS data reviews series, vol. N13. 1995b. p. 3.
17. Harris GL. Young's modulus of SiC. In: Harris GL, editor. Properties of silicon carbide. EMIS data reviews series, vol. N13. 1995c. p. 8.
18. Slack G.A., and Bartram S.F. Thermal expansion of some diamond like crystals. J Appl Phys 46 (1975) 89
19. Goldberg Y., Levinshtein M.E., and Rumyantsev S.L. Properties of advanced semiconductor materials GaN, AlN, SiC, BN, SiC, SiGe. In: Levinshtein M.E., Rumyantsev S.L., and Shur M.S. (Eds) (2001), John Wiley & Sons, Inc., New York 93-148
20. Scace R.I., and Slack G.A. J Chem Phys 42 (1965) 805
21. Makino Y., Ueno T., Matsumoto T., and Miyake S. Jpn J Appl Phys 40 (2001) 1080-1082
22. Tiegs T. Nucl Technol 57 (1981) 389-398
23. Shih C.J., Meyers M.A., Nesterenko V.F., and Chen S.J. Acta Mater 48 (2000) 2399-2420