Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film

Ceramics International

Volumn 35, Issue 3, 2009, Pages 1281-1284

  Dangtip, S ^a   Sripongphan, N ^a   Boonyopakorn, N ^a   Thanachayanont, C ^b  

^a MAHIDOL UNIVERSITY   (Thailand)

^b NATIONAL METAL AND MATERIALS TECHNOLOGY CENTER   (Thailand)

Author keywords

D. TiO2; rf Power; rf Sputtering; Thin film; Working pressure

Indexed keywords

ARGON; CHEMICAL SENSORS; ELECTRODEPOSITION; INERT GASES; METALLIC GLASS; OXIDE MINERALS; THIN FILM DEVICES; THIN FILMS; TITANIUM OXIDES;

D. TIO2; RF-POWER; RF-SPUTTERING; THIN FILM; WORKING PRESSURE;

AMORPHOUS FILMS;

EID: 59549084701     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2008.04.018     Document Type: Article

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