Influence of AsH3 cracking temperature on the H passivation of C acceptors in In0.53Ga0.47As grown by beam epitaxy techniques

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1939-1941

  Jackson, Steven L ^a,b   Baker, Judith E ^a   Stillman, Gregory E ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5944239694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117628     Document Type: Article

References (14)

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