Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Hong, Woong Ki ^a   Jo, Gunho ^a   Choe, Minhyeok ^a   Lee, Takhee ^a   Sohn, Jung Inn ^b   Welland, Mark E ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DEFECTS; ELECTRIC WIRE; EXCITONS; NANOWIRES; PHONONS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE; ZINC OXIDE;

DEFECT EMISSIONS; EMISSION PROCESS; EXCITON EMISSIONS; EXCITON-PHONON COUPLINGS; FIRST ORDERS; FREE EXCITONS; FREE-EXCITON EMISSIONS; HIGH DENSITIES; HOMOEPITAXIAL FILMS; LOWER ENERGIES; RAPID SHIFTS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCES; ULTRA VIOLET EMISSIONS; VIBRATION PEAKS; ZNO NANOWIRES; ZNO NWS;

SURFACE DEFECTS;

EID: 59349120989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072349     Document Type: Article

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