Experimental and simulation studies of resistivity in nanoscale copper films

Microelectronics Reliability

Volumn 49, Issue 2, 2009, Pages 127-134

  Emre Yarimbiyik, A ^a,b   Schafft, Harry A ^b   Allen, Richard A ^b   Vaudin, Mark D ^b   Zaghloul, Mona E ^a  

^a The George Washington University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Copper; Interconnect; Matthiessen's rule; Resistivity; Size effects; Thin films

Indexed keywords

COPPER PLATING; DIFFRACTION; ELECTRIC RESISTANCE; ELECTRON DIFFRACTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MAGNETIC FILMS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; PROFILOMETRY; SHEET RESISTANCE; THIN FILMS; X RAY ANALYSIS;

COPPER FILMS; COPPER LINES; CROSS-SECTIONAL AREAS; ELECTRICAL THICKNESS; ELECTRON BACK-SCATTER DIFFRACTIONS; FITTING PARAMETERS; FOUR-POINT PROBES; GRAIN-BOUNDARY SCATTERINGS; INTERCONNECT; MATTHIESSEN'S RULE; MEAN FREE PATHS; MEAN-GRAIN SIZES; NANO-SCALE; PROFILOMETER; RESISTIVITY; ROOM TEMPERATURES; SIMULATION PROGRAMS; SIMULATION STUDIES; SIZE EFFECTS; SIZE MEASUREMENTS; X-RAY DIFFRACTIONS;

COPPER;

EID: 59349114091     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.11.003     Document Type: Article

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