Theoretical study of pressure effect on the dislocation core properties in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 4, 2009, Pages

  Pizzagalli, L ^a   Demenet, J L ^a   Rabier, J ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 59249107935     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.045203     Document Type: Article

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34. Within anisotropic elasticity theory, the interaction energy between two screw dislocations separated by d is given by E=-K b2 /2πln (d/ r0). K is the elastic prefactor and is equal to C44 (C11 - C12) /2.