Transport and photoinduced properties in La0.8Sn0.2MnO3 thin film

Journal of Alloys and Compounds

Volumn 470, Issue 1-2, 2009, Pages 552-556

  Jin, K X ^a   Zhao, S G ^b   Chen, C L ^a   Du, L F ^a   Du, Y C ^a   Guo, Y H ^a   Xing, H ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electronic transport; Manganites; Thin films

Indexed keywords

INSULATION; LANTHANUM; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXIDE MINERALS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; TIN;

CURRENT VOLTAGES; ELECTRONIC TRANSPORT; HIGH VOLTAGES; INSULATING STATE; LASER IRRADIATIONS; MANGANITES; METAL-INSULATOR TRANSITIONS; METALLIC STATE; NEGATIVE RESISTANCE EFFECTS; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; PHOTO-INDUCED; PHOTOINDUCED PROPERTIES; PULSED LASERS; SYSTEMATIC INVESTIGATIONS; THERMAL FLUCTUATIONS; TIME CONSTANTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59249107075     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.03.031     Document Type: Article

References (23)

1. Von Helmholt R., Wecker J., Holzapfel B., Schultz L., and Samwe K. Phys. Rev. Lett. 71 (1993) 2331
2. Jin S., Tiefel T.H., McCormack M., Fashtnacht R.A., Ramesh R., and Chen L.H. Science 264 (1994) 413
3. Morchshakov V., Yang C.P., Troyanchuk I.O., and Barner K. J. Alloys Compd. 399 (2005) 27
4. Jin K.X., Chen C.L., Zhao S.G., and Song Z.M. Mater. Sci. Eng. B 127 (2006) 285
5. Jin K.X., Chen C.L., Zhao S.G., and Song Z.M. J. Mater. Sci. 41 (2006) 3881
6. Zener C. Phys. Rev. 82 (1951) 403
7. Millis A.J., Littlewood P.B., and Shraiman B.I. Phys. Rev. Lett. 74 (1995) 5144
8. Gao J., Dai S.Y., and Li T.K. Phys. Rev. B 67 (2003) 153403
9. Guo X., Dai S., Zhou Y., Yang G., and Chen Z. Appl. Phys. Lett. 75 (1999) 3378
10. Guo X., Chen Z., Dai S., Zhou Y., Li R., Zhang H., Shen B., and Cheng H. J. Appl. Phys. 88 (2000) 4758
11. Cheng T.Y., Lin C.W., Chang L., Hsu C.H., Lee J.M., Chen J.M., Lin J.Y., Wu K.H., Uen T.M., Gou Y.S., and Juang J.Y. Phys. Rev. B 74 (2006) 134428
12. Jin S., Tiefel T.H., McCormack M., O'Bryan H.M., Chen L.H., Ramesh R., and Schurig D. Appl. Phys. Lett. 67 (1995) 557
13. Takubo N., Ogimoto Y., Nakamura M., Tamaru H., Izumi M., and Miyano K. Phys. Rev. Lett. 95 (2005) 17404
14. Calderon M.J., and Brey L. Phys. Rev. B 64 (2001) 140403.R
15. Song X.F., Lian G.J., and Xiong G.C. Phys. Rev. B 71 (2005) 214427
16. Pietambaram S.V., Kumar D., Singh R.K., and Lee C.B. Phys. Rev. B 58 (1998) 8182
17. Gupta A., McGuire T.R., Duncombe P.R., Rupp M., Sun J.Z., and Gallagher W.J. Appl. Phys. Lett. 67 (1995) 3494
18. Moritomo Y., Kuwahara H., Tomioka Y., and Tokura Y. Phys. Rev. B 55 (1997) 7549
19. Matsuda K., Machida A., Moritomo Y., and Nakamura A. Phys. Rev. B 58 (1998) R4203
20. Anderson P.W., and Hesegawa H. Phys. Rev. 100 (1955) 675
21. Zhao S.G., Jin K.X., and Chen C.L. J. Appl. Phys. 101 (2007) 083701
22. Coey J.M.D., Ryan D.H., and Buder R. Phys. Rev. Lett. 58 (1987) 385
23. Ngai K.L., Rajagopal A.K., and Huang C.Y. J. Appl. Phys. 55 (1991) 1714