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Volumn 517, Issue 7, 2009, Pages 2235-2239
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Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers
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Author keywords
CIGS; CuInGaSe2; Ion exchange; Non vacuum; Thin film solar cells
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Indexed keywords
ANNEALING;
CHEMICAL ENGINEERING;
CHLORINE COMPOUNDS;
COPPER;
INDIUM;
ION EXCHANGE;
ION EXCHANGERS;
PHOTOVOLTAIC CELLS;
SECONDARY ION MASS SPECTROMETRY;
SELENIUM;
SELENIUM COMPOUNDS;
SOLAR CELLS;
SOLAR EQUIPMENT;
THIN FILM DEVICES;
THIN FILMS;
VACUUM;
ANNEALING PROCESS;
CHEMICAL PROCESS;
CIGS;
COPPER CHLORIDES;
COPPER SELENIDE;
COPPER-INDIUM-GALLIUM-DISELENIDE;
CU(IN , GA)SE;
CUINGASE2;
GALLIUM SELENIDE;
NON VACUUM;
PHOTOVOLTAIC ABSORBERS;
PRECURSOR LAYERS;
PREFERRED ORIENTATIONS;
STYLUS PROFILOMETRIES;
SUBSTRATE TEMPERATURES;
THIN FILM SOLAR CELLS;
XRD;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 58949098420
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.10.094 Document Type: Article |
Times cited : (11)
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References (19)
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