Resist and oxide thickness effect on process window for 0.2 μm contact patterns with off-axis illumination and attenuated phase-shift mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 553-558

  Yang, Chuen Huei ^a   Dai, Chang Ming ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Attenuated phase shift mask; Dimple; Oxide layer; Sidelobe effect; Swing curve

Indexed keywords

ETCHING; KRYPTON; MICROMETERS; PHOTOLITHOGRAPHY; PRINTING; THICKNESS MEASUREMENT;

ATTENUATED PHASE-SHIFT MASK; DIMPLE; OXIDE LAYER; SIDELOBE EFFECT; SWING CURVE;

PHASE SHIFT;

EID: 58649098528     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310784     Document Type: Conference Paper

References (2)

1. T. Yasuzato, S. Ishida, and K. Kasama, "Effect of resist surface insoluble layer in attenuated phase-shift mask for window pattern formation", Proc. of SPIE vol. 2440, pp. 804-815, 1995.
2. J. F. Chen, T. Laidig, K. E. Wampler, R. Caldwell, M. Dusa, C. Takemoto, and A. Romano, "Practical i-line OPC contact mask for sub-0.3micron design rule application: part1-OPC design optimization", Proc. of OLIN microlithography seminar, pp. 181-201, 1997.