Anomalous interface degradation of a-Si:H TFTs during LCD lifetime

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 53-61

  Libsch, Frank R ^a   Tsujimura, Takatoshi ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM JAPAN LTD   (Japan)

Author keywords

A Si:H TFTs; AMLCDs; Gate insulator; Interface degradation; Modeling; Reliability; Stability

Indexed keywords

DRAIN CURRENT; ELECTRIC FIELDS; GATE DIELECTRICS; GATES (TRANSISTOR); LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; SILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

A-SI:H TFTS; AMLCDS; GATE INSULATOR; INTERFACE DEGRADATION; MODELING; RELIABILITY; STABILITY;

DEGRADATION;

EID: 58649093323     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270300     Document Type: Conference Paper

References (6)

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6. F.R. Libsch and J. Kanicki, Appl. Phys. Lett., 1286, 13 March, 1993