Ellipsometric studies of the effect of a metal island structure on the optic properties of a semiconductor surface

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3094, Issue , 1997, Pages 328-332

  Dmitruk, Nikolas L ^a   Zabashta, Lubov A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b SUMY STATE UNIVERSITY   (Ukraine)

Author keywords

Doped surface morphology; Ellipsometry; Interfacial layer; Metal semiconductor structures

Indexed keywords

ARSENIC COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GOLD DEPOSITS; METALS; OPTICAL CONSTANTS; POLARIMETERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; STRUCTURAL METALS; SURFACE PROPERTIES;

DOPANT DISTRIBUTIONS; DOPED SURFACE MORPHOLOGY; ELLIPSOMETER; ELLIPSOMETRIC ANGLES; GALLIUM ARSENIDE (GAAS); INTERFACIAL LAYER; ISLAND STRUCTURES; LAYER THICKNESSES; METAL - SEMICONDUCTOR STRUCTURES; OPTIC PROPERTIES; SEMI CONDUCTOR SURFACES; STRUCTURE MODELING;

SURFACE MORPHOLOGY;

EID: 58649088904     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271835     Document Type: Conference Paper

References (6)

1. N.L.Dmitruk, G.Y.Kolbasov, O.I.Mayeva, V.I.Poludin, "Effect of discontinuous gold films on GaAs-electrolyte contact properties," Thin Solid Films, pp.341-346, VOL.75, 1981.
2. V.I.Strikha, E.E.Buzanova, I.A.Radzievskii, "Poluprovodnikovyie pribori s barierom Shotky," Soviet Radio, Moscov, 1974.
3. L.A.Zabashta, O.I. Zabashta, "Solution of inverse problem in ellipsometry," Abstracts of International Conference OPTDIM-95, p.40, Kiev, 1995.
4. N.L.Dmitruk, O.I.Mayeva, V.I.Poludin, "Effect of the metal island structure films on electrolyte contact properties," Physics and engineerin of Semiconductors Vol.10, N10, pp. 1925-1931, 1976.
5. V.N. Antonuk, N.L.Dmitruk, M.F.Medvedeva,in: Ellipsometry in science and engineering, pp.66-71, Novosibirsk, 1987.
6. B.V.Ioffe, Refractometry methods of chemistry, Leningrad, 1983.