Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

Semiconductors

Volumn 43, Issue 1, 2009, Pages 7-13

  Romaka, V A ^a,b   Fruchart, D ^c   Romaka, V V ^d   Hlil, E K ^c   Stadnyk, Yu V ^d   Gorelenko, K Yu ^d   Akselrud, L G ^d  

^a PIDSTRYHACH INSTITUTE FOR APPLIED PROBLEMS OF MECHANICS AND MATHEMATICS   (Ukraine)

^b LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

^c CNRS   (France)

^d IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 58449136353     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782609010035     Document Type: Article

References (16)

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