Thin film transistors based on thienylenevinylene oligomers: structure property relationships

Synthetic Metals

Volumn 102, Issue 1-3, 1999, Pages 984-

  Maud, J M ^a   Thompson, N J ^a   Mansikka, T J ^a   Salih, A J ^a   Marshall, J M ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER MOBILITY; COMPOSITION; ELECTRON TRANSITIONS; EVAPORATION; MOLECULAR STRUCTURE; SEMICONDUCTING ORGANIC COMPOUNDS; SYNTHESIS (CHEMICAL);

ARRHENIUS RELATIONSHIP; OLIGOMER RADICAL CATION; STRUCTURAL PROPERTIES; THIENYLENEVINYLENE OLIGOMERS; VACUUM EVAPORATION;

THIN FILM TRANSISTORS;

EID: 58449115781     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(98)01096-0     Document Type: Article

References (3)

1. G. Horowitz Adv. Mater. 10 1998 365
2. J.M. Maud N.J. Thompson A.R. Hepbum J.M. Marshall Synth. Met. 55–57 1993 4777
3. Hotta K. Waragai J. Phys. Chem. 97 1993 7427