|
Volumn 64, Issue 1, 2009, Pages 90-100
|
Metal oxide semiconductors based on tin dioxide: Gas-sensitivity to methane in a wide range of temperatures, concentrations and humidities of the gas phase
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ATMOSPHERIC HUMIDITY;
CHARGE COUPLED DEVICES;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
GAS DYNAMICS;
METALLIC COMPOUNDS;
METEOROLOGY;
METHANE;
MOISTURE;
MOS DEVICES;
PALLADIUM;
PLATINUM;
SEMICONDUCTOR MATERIALS;
TIN;
TIN DIOXIDE;
TITANIUM COMPOUNDS;
TRANSISTORS;
CONCENTRATION DEPENDENCES;
CONCENTRATION RANGES;
FILM TECHNOLOGY;
GAS PHASE;
GAS SENSITIVITY;
METAL-OXIDE SEMICONDUCTOR (MOS);
METAL-OXIDE-SEMICONDUCTORS (MOS);
TECHNICAL CHARACTERISTICS;
TEMPERATURE RANGES;
WIDE-RANGE;
GASES;
|
EID: 58449098167
PISSN: 10619348
EISSN: None
Source Type: Journal
DOI: 10.1134/S1061934809010171 Document Type: Article |
Times cited : (10)
|
References (31)
|