Electrical properties of PECVD oxide films deposited at room temperature

Electronics Letters

Volumn 32, Issue 21, 1996, Pages 2015-2016

  Kim, K ^a   Song, Y ^a   Lee, G S ^a   Song, J ^b  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b Dallas Semiconductor   (United States)

Author keywords

Chemical vapour deposition; Dielectric properties; Dielectric properties of solid; Plasma CVD; Silicon dioxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CURRENT DENSITY; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; PHOTOLITHOGRAPHY; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE PER UNIT AREA; ELECTRIC FIELD STRENGTH; ELECTRON INJECTION; INTERFACE TRAP DENSITY; POST METALLISATION ANNEAL; SILICON OXIDE; SURFACE POTENTIAL; VALENCE BAND EDGE; WAFERS;

DIELECTRIC FILMS;

EID: 5844397061     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961313     Document Type: Article

References (5)

1. BATEY, J., and TIERNEY, E.: 'Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition', J. Appl. Phys., 1986, 60, (9), pp. 3136-3145
2. SONG, J., LEE, G.S., and AJMERA, P.K.: 'Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide', J. Electron. Mater., 1995, 24, (10), pp. 1507-1510
3. KERN, W., and PUOTINEN, D.A.: 'Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology', RCA Rev., June 1970, pp. 187-206
4. TERMAN, L.M.: 'An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes', Solid State Electron., 1962, 5, pp. 285-299
5. 2 films', J. Appl. Phys., 1980, 51, (9), pp. 4830-4841