Evidence for interface terraces in Ge/Si quantum wells obtained by Raman scattering

Physica B: Condensed Matter

Volumn 219-220, Issue 1-4, 1996, Pages 502-504

  Brafman, O ^a,b   Manor, R ^a   Aroujo Silva, M A ^b   Cerdeira, F ^b   Bean, J C ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

INTERFACIAL TERRACES; LASER ENERGY; QUANTUM WELL MULTIPLICITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 5844328701     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00792-X     Document Type: Article

References (13)

1. D. Gammon, B.V. Shamabrook and D.S. Katzer, Phys. Rev. Lett. 67 (1991) 1547.
2. J. Grant, J. Menéndez, A. Pinczuk, L.N. Pfeiffer, K.W. West, E. Molinari and S. Baroni, Appl. Phys. Lett. 59 (1991) 2859.
3. B. Jusserand, Phys. Rev. B 42 (1990) 7256.
4. B. Jusserand, F. Mollt, E. Molinari and S. Baroni, Surf. Sci. 267 (1992) 171.
5. M.I. Alonso, F. Cerdeira, D. Niles, M. Cardona, E. Kasper and H. Kibbel, J. Appl. Phys. 66 (1989) 5645.
6. S. de Gironcoli, E. Molinari, R. Schorer and G. Abstreiter, Phys. Rev. B 48 (1993) 8959 and references therein.
7. S. de Gironcoli and S. Baroni, in: Proc. XXI Int. Conf. on the Physics of Semiconductors, Beijing, China, 1992, eds. Ping Jiang and Hou-Zhi Zheng (World Scientific, Singapore, 1992) p. 109 and references therein.
8. S. de Gironcoli and E. Molinari, Solid State Electronics 37 (1994) 621.
9. R. Schorer, G. Abstreiter, S. de Gironcoli, E. Molinari, H. Kibbel and H. Presting, Phys. Rev. B 49 (1994) 5406.
10. M.J.S.P. Brasil, R.E. Nahory, M.C. Tamargo and S.A. Schwarz, Appl. Phys. Lett. 63 (1993) 2688.
11. R. Hull and J.C. Bean, in: Semiconductors and Semimetals, Vol. 33, ed. T.P. Pearsall (Academic Press, New York, 1991) p. 1.
12. P.A.M. Rodrigues, M.A. Araújo Silva, F. Cerdeira and J.C. Bean, Phys. Rev. B 48 (1993) 18024.
13. The absence of this effect in these two samples proves that the selective resonant Raman effect originates in a width distribution within each quantum well rather than in width fluctuations from one well to another, since all three samples have many repeated quantum wells fabricated in identical conditions.