Passivation of copper by low temperature annealing of Cu/Mg/SiO2 bilayers

Chemical Engineering Communications

Volumn 152-53, Issue , 1996, Pages 253-259

  Wang, W ^a   Ding, P J ^a   Hymes, S ^b   Murarka, S P ^b   Lanford, W A ^a,c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Copper; Metallization; Microelectronics; Passivation; Resistivity

Indexed keywords

ANNEALING; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIA; METALLIZING; MICROELECTRONICS; OXIDATION RESISTANCE; PASSIVATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SUBSTRATES; THERMAL EFFECTS;

VACUUM ANNEALING;

THIN FILMS;

EID: 5844266929     PISSN: 00986445     EISSN: None     Source Type: Journal    
DOI: 10.1080/00986449608936566     Document Type: Article

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